Diamond is largely recognized as the ideal material in wide bandgap development, but realizing its full potential in field-effect transistors has been challenging. Researchers incorporate a new approach by using the deep-depletion regime of bulk-boron-doped diamond MOSFETs. The new proof of concept enables the production of simple diamond MOSFET structures from single boron-doped epilayer stacks. This method increases the mobility by an order of magnitude. The results are published this week in …